Thank you for your interest in part number IRF9150, a component manufactured by Vishay Intertechnology Inc that we sell here on NSN Parts Finder. For your reference, this item is presented with the NSN 5961-01-594-7973 and features the description “Transistor.” To request a quote for part number IRF9150, simply fill out the form below with key details like your budget, required quantity, and anticipated fulfillment timeline. Within 15 minutes of receiving and reviewing your submission, our staff members will present you with competitive purchasing options tailored to your needs. Alternatively, you are also welcome to give us a call or email, and we will gladly guide you through the quotation process or discuss any custom solutions you happen to be seeking.
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With a global supply chain and ample purchasing power, we can provide highly competitive pricing and swift lead times on numerous NSN 5961-01-594-7973 products. More than that, we exclusively procure our inventory from reliable manufacturers to guarantee quality, including this component from Vishay Intertechnology Inc, which is associated with the CAGECode 18612. Keeping this in mind, get in touch with our specialists today to secure a quote on the FSC 5961 Semiconductor Devices and Associated Hardware part number IRF9150.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-594-7973 Item PartTypeName: TRANSISTOR | 5961 | 015947973 | N | A | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| A | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| IRF9150 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION |
| FEAT | SPECIAL FEATURES | SINGLE PULSE AVALANCHE ENERGY RELATED; SOA IS POWER DISSIPATION LIMITED; NANOSECOND SWITCHING SPEEDS; LINEAR TRANSFER CHARACTERISTICS; HIGH INPUT IMPEDANCE; -25 TO -100V; P-CHANNEL ENHANCEMENT MODE GATE POWER FIELD EFFECT TRANSISTOR |
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